STI Publications - View Publication Form #11392

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Publication Information
Title EVALUATION OF SILICON DIODES AS IN-SITU CRYOGENIC FIELD EMISSION DETECTORS FOR SRF CAVITY DEVELOPMENT
Abstract We performed in-situ cryogenic testing of four silicon diodes as possible candidates for field emission (FE) monitors of superconducting radio frequency (SRF) cavities during qualification testing and in accelerator cryo-modules. We evaluated diodes from 2 companies - from Hamamatsu corporation model S1223-01; and from OSI Optoelectronics models OSD35-LR-A, XUV-50C, and FIL-UV20. The measurements were done by placing the diodes in superfluid liquid helium near the top of a field emitting 9-cell cavity during its vertical test. For each diode, we will discuss their viability as a 2K cryogenic detector for FE mapping of SRF cavities and the directionality of S1223-01 in such environments. We will also present calibration curves between the diodes and JLab's standard radiation detector placed above the Dewar's top plate.
Author(s) Ari Palczewski, Rongli Geng
Publication Date July 2012
Document Type Meeting, Proceedings
Primary Institution Thomas Jefferson National Accelerator Facility, Newport News
Affiliation Accelerator Ops, R&D / Inst for SRF Sci & Tech / SRF Processes & Materials
Funding Source
Proprietary? No
This publication conveys Technical Science Results
Document Numbers
JLAB Number: JLAB-ACC-12-1552 OSTI Number: 1048067
LANL Number: Other Number: DOE/OR/23177-2148
Associated with an experiment No
Associated with EIC No
Supported by Jefferson Lab LDRD Funding No
Meeting / Conference
Meeting Name IPAC'12
Meeting Date 5/20/2012
Document Subtype Paper (proceedings only)
Proceedings
Title Proceedings of IPAC 2012
Editor(s) Jeff Corbett, Catherine Eyberger, Kevin Morris, Christine Petit-Jean-Genaz, Todd Satogata, Volker RW Schaa
Publisher IEEE
Refereed Yes
Page Number 2438
Year 2012
Attachments/Datasets/DOI Link
Document(s)
WEPPC09517.pdf (STI Document)
Dataset(s) (none)
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