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Title Record-level Quantum Efficiency from a High Polarization Strained GaAs/GaAsP Superlattice Photocathode with Distributed Bragg Reflector
Abstract Photocathodes that provide high polarization and high quantum efficiency (QE) can significantly enhance the physics capabilities of electron accelerators. We report record-level QE from a high-polarization strained GaAs/GaAsP superlattice photocathode fabricated with a Distributed Bragg Reflector (DBR). The DBR photocathode technique enhances the absorption of incident laser light thereby enhancing QE, but as literature suggests, it is very challenging to optimize all of the parameters associated with the fabrication of complicated photocathode structures composed of many distinct layers. Past reports of DBR photocathodes describe high polarization but typically QE of only ~ 1%, which is comparable to QE of high polarization photocathodes grown without a DBR structure. This work describes a new strained GaAs/GaAsP superlattice DBR photocathode exhibiting polarization of 84% and QE of 6.4%.
Author(s) Wei Liu, Matthew Poelker, Marcy Stutzman, Shukui Zhang, Aaron Moy, Y. Chen, W. Lu
Publication Date December 2016
Document Type Journal Article
Primary Institution Thomas Jefferson National Accelerator Facility, Newport News
Affiliation Accelerator Ops, R&D / Ctr For Injectors&Sources / Ctr for Injectors&Sources
Funding Source Nuclear Physics (NP), SBIR
Proprietary? No
This publication conveys Technical Science Results
Document Numbers
JLAB Number: JLAB-ACC-16-2394 OSTI Number: 1343296
LANL Number: Other Number: DOE/OR/23177-4016
Associated with an experiment No
Associated with EIC No
Supported by Jefferson Lab LDRD Funding No
Journal Article
Journal Name Applied Physics Letters
Refereed Yes
Volume 109
Issue
Page(s) 252104
Attachments/Datasets/DOI Link
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DOI Link
Dataset(s) (none)
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