| Title | Improvements in Modeling N Diffusion |
| Authors | Eric Lechner, A. Palczewski, C. Reece, Michael Kelley, Jonathan Willis Angle, Fred Stevie |
| JLAB number | (None) |
| LANL number | (None) |
| Other number | (None) |
| Document Type(s) | (Meeting) |
| Category: |
SRF Technology
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| Associated with EIC: | No |
| Supported by Jefferson Lab LDRD Funding: | No |
| Funding Source: | Nuclear Physics (NP) |
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Meeting
Poster compiled for SRF 2021
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| Publication Abstract: | Tailoring a model to accurately describe the near surface interstitial N concentration profile is of great importance to optimizing N doping recipes. During doping, nitrides form on the surface which are subsequently removed. The lossy nitrides grown contain information about the diffusion process. The dependence of nitride growth on the post N doping annealing time is examined with SEM and SIMS using various recipes. The implications of these measurements on N diffusion modeling is discussed. |
| Experiment Numbers: | |
| Group: | SRF Research & Dev |
| Document: | |
| DOI: | |
| Accepted Manuscript: | |
| Supporting Documents: |
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Supporting Datasets:
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