STI Publications - View Publication Form #16564
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Publication Information
| Title | Improvements in Modeling N Diffusion | ||||
| Abstract | Tailoring a model to accurately describe the near surface interstitial N concentration profile is of great importance to optimizing N doping recipes. During doping, nitrides form on the surface which are subsequently removed. The lossy nitrides grown contain information about the diffusion process. The dependence of nitride growth on the post N doping annealing time is examined with SEM and SIMS using various recipes. The implications of these measurements on N diffusion modeling is discussed. | ||||
| Author(s) | Eric Lechner, A. Palczewski, C. Reece, Michael Kelley, Jonathan Willis Angle, Fred Stevie | ||||
| Publication Date | To Appear in 2021 | ||||
| Category | SRF Technology | ||||
| Document Type | Meeting | ||||
| Primary Institution | Thomas Jefferson National Accelerator Facility, Newport News | ||||
| Affiliation | Accelerator Ops, R&D / Inst for SRF Sci & Tech / SRF Research & Dev | ||||
| Funding Source | Nuclear Physics (NP) | ||||
| Proprietary? | No | ||||
| This publication conveys | Technical Science Results | ||||
| Document Numbers |
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| Associated with an experiment | No | ||||
| Associated with EIC | No | ||||
| Supported by Jefferson Lab LDRD Funding | No |
Meeting / Conference
| Meeting Name | SRF 2021 |
| Meeting Date | 6/28/2021 |
| Document Subtype | Poster |
Attachments/Datasets/DOI Link
| Document(s) | (none) |
| Dataset(s) | (none) |
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