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Publication Information
Title Improvements in Modeling N Diffusion
Abstract Tailoring a model to accurately describe the near surface interstitial N concentration profile is of great importance to optimizing N doping recipes. During doping, nitrides form on the surface which are subsequently removed. The lossy nitrides grown contain information about the diffusion process. The dependence of nitride growth on the post N doping annealing time is examined with SEM and SIMS using various recipes. The implications of these measurements on N diffusion modeling is discussed.
Author(s) Eric Lechner, A. Palczewski, C. Reece, Michael Kelley, Jonathan Willis Angle, Fred Stevie
Publication Date To Appear in 2021
Category SRF Technology
Document Type Meeting
Primary Institution Thomas Jefferson National Accelerator Facility, Newport News
Affiliation Accelerator Ops, R&D / Inst for SRF Sci & Tech / SRF Research & Dev
Funding Source Nuclear Physics (NP)
Proprietary? No
This publication conveys Technical Science Results
Document Numbers
JLAB Number: OSTI Number:
LANL Number: Other Number:
Associated with an experiment No
Associated with EIC No
Supported by Jefferson Lab LDRD Funding No
Meeting / Conference
Meeting Name SRF 2021
Meeting Date 6/28/2021
Document Subtype Poster
Attachments/Datasets/DOI Link
Document(s) (none)
Dataset(s) (none)
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