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Title 300 kV DC High Voltage Photogun with Inverted Insulator Geometry and CsK2sb Photocathode
Authors Yan Wang, Philip Adderley, Donald Bullard, Jay Benesch, Joseph Grames, Fay Hannon, Carlos Hernandez-Garcia, John Hansknecht, Geoffrey Krafft, Reza Kazimi, Bernard Poelker, Md Abdullah Mamun, Riad Suleiman, Jose Palacios, Michael Tiefenback, Shukui Zhang, W M Sajini Wijethunga
JLAB number JLAB-ACO-18-2770
LANL number (None)
Other number DOE/OR/23177-4535
Document Type(s) (Meeting) 
Associated with EIC: No
Supported by Jefferson Lab LDRD Funding: Yes
LDRD Numbers: 2018-LDRD-5
Funding Source: Nuclear Physics (NP)
 

Meeting
Paper compiled for IPAC'18

Proceedings
Proceedings of IPAC 2018
Edited By Shane Koscielniak, Todd Satogata, Volker RW Schaa, Jana Thomson
JaCoW (2018)
Page(s) 4571
Publication Abstract: A compact DC high voltage photogun with inverted-insulator geometry was designed, built and operated reli-ably at -300 kV bias voltage using alkali-antimonide photocathodes. This presentation describes key electrostatic design features of the photogun with accompanying emittance measurements obtained across the entire photocathode surface that speak to field non-uniformity within the cathode/anode gap. A summary of initial photocathode lifetime measurements at beam currents up to 4.5 mA is presented.
Experiment Numbers: other
Group: Ops Injector Group
Document: pdf
DOI: https://doi.org/10.18429/JACoW-IPAC2018-THPMK110
Accepted Manuscript:
Supporting Documents:
Wang_THPMK1101.docx.htmOriginal MS word version of paper (Supporting)
Supporting Datasets: